EP3926698

[0001] The invention relates to a a light emitting diode. A light emitting structure comprises a first conductivity type semiconductor layer (110), an active layer (120) and a second conductivity type semiconductor layer (130). Mesa-etched areas (150) are formed from the surface of the second conductivity type semiconductor layer (130) to the first conductivity type semiconductor layer (110). A reflective electrode (140) is formed on the second conductivity type semiconductor layer (130) and includes a reflective metal layer (142), a barrier metal layer (144) and a stress relieving layer (143) formed between the reflective metal layer (142) and the barrier metal layer (144), wherein the stress relieving layer (143) has a coefficient of thermal expansion between the coefficient of thermal expansion of the reflective metal layer (142) and the coefficient of thermal expansion of the barrier metal layer (144). A lower insulation layer (200) covers an overall surface of the structure formed by the first conductivity type semiconductor layer (110), the active layer (120), the second conductivity type semiconductor layer (130), the mesa-etched areas (150) and the reflective electrode (140), with the lower insulation layer (200) allowing an upper surface of the reflective electrode (140) to be partially exposed therethrough and further allowing the surface of the first conductivity type semiconductor layer (110) to be exposed therethrough in the mesa-etched areas (150). A current spreading layer (210) is formed on the lower insulation layer (200) covering the first conductivity type semiconductor layer (110) and is electrically connected to the first conductivity type semiconductor layer (110). An upper insulation layer (220) is formed on the current spreading layer (210), with both the current spreading layer (210) and the reflective electrode (140) being partially exposed through the upper insulation layer (220). A first pad (230) is electrically connected to the current spreading layer (210) exposed through the upper insulation layer (220), and a second pad (240) is electrically connected to the reflective electrode (140) exposed through the upper insulation layer (220).