EP3850660
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND METHODS FOR FORMING THE SAME
Anmelder
YANGTZE MEMORY TECH CO LTD [CN]
Erfinder
WEI QINXIANG [CN]SUN JIANHUA [CN]XIA JI [CN]
Externe Quellen
Klassifikation
IPC-Klassen
H10B 41/20H10B 41/50H10B 43/10H10B 43/20H10B 43/35H01L 21/768H01L 23/538H10B 43/27H10B 43/40H10B 43/50
CPC-Klassen
H10B 43/27H10B 43/35H10B 43/40H10B 43/50H10D 64/037H10D 84/0149H10W 20/056H10W 20/076H10W 20/081H10W 20/083H10W 20/42
AI: Semiconductors
warum
Yangtze Memory 3D NAND — H10B + H01L. Semiconductors.